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Senior Cell Device Engineer

דאליין, סין Job ID JR0267569 Job Category Manufacturing and Process Development Work Mode On-site Required Experience Level Experienced סוג שעות משרה מלאה
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Job Description


Intel Dalian Memory Technology and Manufacturing (DMTM) is high-volume manufacturing memory fab in Intel China working on leading edge 3D NAND product. Intel and SK Hynix have an agreement for SK Hynix to acquire Intel's NAND memory and storage business. and Intel will continue to manufacture NAND wafers at the Dalian memory manufacturing until the final closing expected to occur in March 2025. Intel DMTM will continue to build on the success of our NAND technology at a greater scale, play a larger role in supporting our customers.

Creates next generation device and interconnect technology by ensuring the process device performance for developing processes is world class, using deep understanding of device physics. Evaluates device performance data, using statistics, data mining, and other data analysis techniques to collect, explore and extract insights from electrical test and process yield data. Develops scripts, algorithms and applications to translate experimental data into intelligence in order to define future development direction. Defines robust test structures and test programs to validate advanced design rules and reliably extract key device and interconnect parameters. Sets device and interconnect performance targets for process design kit releases and interface with design and foundry partners to address circuit level issues. Assesses silicon to simulation health and readiness for high volume manufacturing.

This position is associated with the sale of Intel's NAND memory and storage business to SK. This transaction will enhance the resources and potential of the business' storage, and you will be joining a world-class team that will transition to lead the SSD business at SK group. We will keep you informed updates and steps related to this transaction.


Qualifications


Master or Ph.D. degree in electrical engineering, Physics, Material Science or a related field is required. Minimum of 5 years of experience in the semiconductor industry, with a strong focus on device engineering, process integration, yield improvement and problem solving. Candidate should have strong project management skills, good influence and communication skills. Flexibility and maturity in dealing with uncertainties and prioritization. Commit to aggressive goals with a can-do spirit.

Inside this Business Group


Employees in Intel's NAND Product Group deliver solutions that are transforming computing across all segments from data centers to Ultrabooks. They invent, develop, bring to market and support customers with leading-edge NAND flash memory and system level solutions such as solid state drives (SSDs). SSDs are accelerating performance for gaming enthusiasts, reducing total cost of ownership for IT managers of data centers and improving security and reliability for businesses. This dynamic group is strategically positioned to become the leading Non-Volatile Memory solution supplier for the compute segment and is a key to expanding markets and continuing the growth for Intel.


Posting Statement


All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.

Benefits


We offer a total compensation package that ranks among the best in the industry. It consists of competitive pay, stock, bonuses, as well as, benefit programs which include health, retirement, and vacation. Find more information about all of our Amazing Benefits here.


Working Model


This role will require an on-site presence.* Job posting details (such as work model, location or time type) are subject to change...
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